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NXP Semiconductors
PESD3V3U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
7. Application information
The PESD3V3U1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD. The devices may be used on lines where the
signal polarities are either positive or negative with respect to ground.
line to be protected
(positive signal polarity)
DUT
GND
line to be protected
(negative signal polarity)
DUT
GND
unidirectional protection of one line
006aab251
Fig 5.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD3V3U1UA_UB_UL_1
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2008
6 of 12
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相关代理商/技术参数
PESD3V3U1UB 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance unidirectional ESD protection diodes
PESD3V3U1UB,115 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD 1L ULTRA LO CD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD3V3U1UB115 制造商:NXP Semiconductors 功能描述:ESD PROTECTION DIODE SOD-523- 制造商:NXP Semiconductors 功能描述:DIODE ((NW))
PESD3V3U1UL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance unidirectional ESD protection diodes
PESD3V3U1UL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD 1L ULTRA LO CD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD3V3U1UT 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.8UA 3.3V SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.8UA, 3.3V, SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, 0.8UA, 3.3V, SOT-23; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Breakdown Voltage Min:5.8V; Breakdown Voltage Max:6.9V; Clamping Voltage Vc Max:20V; Peak Pulse Current Ippm:5A; Diode Case ;RoHS Compliant: Yes
PESD3V3U1UT,215 功能描述:TVS二极管阵列 3.3 ESD PROTECTION RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD3V3U1UT215 制造商:NXP Semiconductors 功能描述:DIODE TVS SOT-23